FLASH MEMORY Flash memory is a solid-state, non-volatile, rewritable memory that functions like RAM and a hard disk drive combined. Flash memory stores bits of electronic data in memory cells, just like DRAM, but it also works like a hard-disk drive in that when the power is turned off, the data remains in memory. Because of its high speed, durability, and low voltage requirements, flash memory is ideal for use in many applications - such as digital cameras, cell phones, printers, handheld computers, pagers, and audio recorders.
Flash memory is available in many different form factors, including: CompactFlash, Secure Digital, SmartMedia, MultiMedia and USB Memory
PC CARD AND CREDIT CARD MEMORY Before SO DIMMs became popular, most notebook memory was developed using proprietary designs. It is always more cost-effective for a system manufacturer to use standard components, and at one point, it became popular to use the same "credit card" like packaging for memory that is used on PC Cards today. Because the modules looked like PC Cards, many people thought the memory cards were the same as PC Cards, and could fit into PC Card slots. At the time, this memory was described as "Credit Card Memory" because the form factor was the approximate size of a credit card. Because of its compact form factor, credit card memory was ideal for notebook applications where space is limited.
PC Cards use an input/output protocol that used to be referred to as PCMCIA (Personal Computer Memory Card International Association). This standard is designed for attaching input/output devices such as network adapters, fax/modems, or hard drives to notebook computers. Because PC Card memory resembles the types of cards designed for use in a notebook computer's PC Card slot, some people have mistakenly thought that the memory modules could be used in the PC Card slot. To date, RAM has not been packaged on a PCMCIA card because the technology doesn't allow the processor to communicate quickly enough with memory. Currently, the most common type of memory on PC Card modules is Flash memory.
On the surface, credit card memory does not resemble a typical memory module configuration. However, on the inside you will find standard TSOP memory chips.
TECHNOLOGY TIMELINE This section presents the most common memory technologies used for main memory: This road map offers an overview of the evolution of memory.
| YEAR INTRODUCED | TECHNOLOGY | SPEED LIMIT |
| 1987 | FPM | 50ns |
| 1995 | EDO | 50ns |
| 1997 | PC66 SDRAM | 66MHz |
| 1998 | PC100 SDRAM | 100MHz |
| 1999 | RDRAM | 800MHz |
| 1999/2000 | PC133 SRAM | 133MHz (VCM option) |
| 2000 | DDR SDRAM | 266MHz |
| 2001 | DDR SDRAM | 333MHz |
| 2002 | DDR SDRAM | 434MHz |
| 2003 | DDR SDRAM | 500MHz |
| 2004 | DDR2 SDRAM | 533MHz |
| 2005 | DDR2 SDRAM | 800MHz |
| 2006 | DDR2 SDRAM | 667 - 800MHz |
| 2007 | DDR3 SDRAM | 1066 - 1333MHz |
MAJOR CHIP TECHNOLOGIES It's usually pretty easy to tell memory module form factors apart because of physical differences. Most module form factors can support various memory technologies so, it's possible for two modules to appear to be the same when, in fact, they're not. For example, a 168-pin DIMM can be used for EDO, Synchronous DRAM, or some other type of memory. The only way to tell precisely what kind of memory a module contains is to interpret the marking on the chips. Each DRAM chip manufacturer has different markings and part numbers to identify the chip technology.
FAST PAGE MODE (FPM) At one time, FPM was the most common form of DRAM found in computers. In fact, it was so common that people simply called it "DRAM," leaving off the "FPM". FPM offered an advantage over earlier memory technologies because it enabled faster access to data located within the same row.
EXTENDED DATA OUT (EDO) In 1995, EDO became the next memory innovation. It was similar to FPM, but with a slight modification that allowed consecutive memory accesses to occur much faster. This meant the memory controller could save time by cutting out a few steps in the addressing process. EDO enabled the CPU to access memory 10 to 15% faster than with FPM.
SYNCHRONOUS DRAM (SDRAM) In late 1996, SDRAM began to appear in systems. Unlike previous technologies, SDRAM is designed to synchronize itself with the timing of the CPU. This enables the memory controller to know the exact clock cycle when the requested data will be ready, so the CPU no longer has to wait between memory accesses. SDRAM chips also take advantage of interleaving and burst mode functions, which make memory retrieval even faster. SDRAM modules come in several different speeds so as to synchronize to the clock speeds of the systems they'll be used in. For example, PC66 SDRAM runs at 66MHz, PC100 SDRAM runs at 100MHz, PC133 SDRAM runs at 133MHz, and so on. Faster SDRAM speeds such as 200MHz and 266MHz are currently in development.
DOUBLE DATA RATE SYNCHRONOUS DRAM (DDR SDRAM) DDR SDRAM, is a next-generation SDRAM technology. It allows the memory chip to perform transactions on both the rising and falling edges of the clock cycle. For example, with DDR SDRAM, a 100 or 133MHz memory bus clock rate yields an effective data rate of 200MHz or 266MHz. Click here for more on DDR.
Click here for more on DDR. DOUBLE DATA RATE 2 SYNCHRONOUS DRAM (DDR2 SDRAM) DDR2 is the second generation of Double Data Rate (DDR) SDRAM memory. It is an evolution of DDR memory technology that delivers higher speeds (up to 800 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems and the lower power consumption is a perfect match for today's mobile users.
Click here for more on DDR2.
DOUBLE DATA RATE 3 SYNCHRONOUS DRAM (DDR3 SDRAM) DDR3 is the third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms. DDR3 modules will be available in the second half of 2007.
DIRECT RAMBUS Direct Rambus is a DRAM architecture and interface standard that challenges traditional main memory designs. Direct Rambus technology is extraordinarily fast compared to older memory technologies. It transfers data at speeds up to 800MHz over a narrow 16-bit bus called a Direct Rambus Channel. This high-speed clock rate is possible due to a feature called "double clocked," which allows operations to occur on both the rising and falling edges of the clock cycle. Also, each memory device on an RDRAM module provides up to 1.6 gigabytes per second of bandwidth - twice the bandwidth available with current 100MHz SDRAM.
In addition to chip technologies designed for use in main memory, there are also specialty memory technologies that have been developed for video applications.
MEMORY TECHNOLOGIES FOR VIDEO OR GRAPHICS PROCESSING VIDEO RAM (VRAM) VRAM is a video version of FPM technology. VRAM typically has two ports instead of one, which allows the memory to allocate one channel to refreshing the screen while the other is focused on changing the images on the screen. This works much more efficiently than regular DRAM when it comes to video applications. However, since video memory chips are used in much lower quantities than main memory chips, they tend to be more expensive. So, a system designer may choose to use regular DRAM in a video subsystem, depending on whether cost or performance is the design objective.
WINDOW RAM (WRAM) WRAM is another type of dual-ported memory also used in graphics-intensive systems. It differs slightly from VRAM in that its dedicated display port is smaller and it supports EDO features.
SYNCHRONOUS GRAPHICS RAM (SGRAM) SGRAM is a video-specific extension of SDRAM that includes graphics-specific read/write features. SGRAM also allows data to be retrieved and modified in blocks, instead of individually. This reduces the number of reads and writes that memory must perform and increases the performance of the graphics controller by making the process more efficient.
BASE RAMBUS AND CONCURRENT RAMBUS Before it even became a contender for main memory, Rambus technology was actually used in video memory. The current Rambus main memory technology is called Direct Rambus. Two earlier forms of Rambus are Base Rambus and Concurrent Rambus. These forms of Rambus have been used in specialty video applications in some workstations and video game systems like Nintendo 64 for several years.
OTHER MEMORY TECHNOLOGIES YOU MAY
HAVE HEARD ABOUT ENHANCED SDRAM (ESDRAM) In order to increase the speed and efficiency of standard memory modules, some manufacturers have incorporated a small amount of SRAM directly into the chip, effectively creating an on-chip cache. ESDRAM is essentially SDRAM, plus a small amount of SRAM cache, which allows for burst operations of up to 200MHz. Just as with external cache memory, the goal of cache DRAM is to hold the most frequently used data in the SRAM cache to minimize accesses to the slower DRAM. One advantage of on-chip SRAM is that it enables a wider bus between the SRAM and DRAM, effectively increasing the bandwidth and speed of the DRAM.
FAST CYCLE RAM (FCRAM) FCRAM, co-developed by Toshiba and Fujitsu, is intended for specialty applications such as high-end servers, printers, and telecommunications switching systems. It includes memory array segmentation and internal pipelining that speed random access and reduce power consumption.
SYNCLINK DRAM (SLDRAM) Though considered obsolete today, SLDRAM was developed by a consortium of DRAM manufacturers as an alternative to Rambus technology in the late 1990s.
VIRTUAL CHANNEL MEMORY (VCM) Developed by NEC, VCM allows different "blocks" of memory to interface inde-pendently with the memory controller, each with its own buffer. This way, different system tasks can be assigned their own "virtual channels," and information related to one function does not share buffer space with other tasks occurring at the same time, making operations more efficient.
ERROR CHECKING Ensuring the integrity of data stored in memory is an important aspect of memory design. Two primary means of accomplishing this are
parity and
error correction code (ECC).
Historically,
parity has been the most commonly used data integrity method. Parity can detect - but not correct - single-bit errors.
Error Correction Code (ECC) is a more comprehensive method of data integrity checking that can detect and correct single-bit errors.
Fewer and fewer PC manufacturers are supporting data integrity checking in their designs. This is due to a couple of factors. First, by eliminating support for parity memory, which is more expensive than standard memory, manufacturers can lower the price of their computers. Fortunately, this trend is complemented by the second factor: that is, the increased quality of memory components available from certain manufacturers and, as a result, the relative infrequency of memory errors.
The type of data integrity checking depends on how a given computer system will be used. If the computer is to play a critical role - as a server, for example - then a computer that supports data integrity checking is an ideal choice. In general:
- Most computers designed for use as high-end servers support ECC memory.
- Most low-cost computers designed for use at home or for small businesses support non-parity memory.
PARITY When parity is in use on a computer system, one parity bit is stored in DRAM along with every 8 bits (1 byte) of data. The two types of parity protocol - odd parity and even parity - function in similar ways.
ECC Error Correction Code is the data integrity checking method used primarily in high-end PCs and file servers. The important difference between ECC and parity is that ECC is capable of detecting and correcting 1-bit errors. With ECC, 1-bit error correction usually takes place without the user even knowing an error has occurred. Depending on the type of memory controller the computer uses, ECC can also detect rare 2 bit memory errors. While ECC can detect a multiple-bit errors, it cannot correct them. However, there are some more complex forms of ECC that can correct multiple bit errors.
Using a special mathematical sequence, algorithm, and working in conjunction with the memory controller, the ECC circuit appends ECC bits to the data bits, which are stored together in memory. When the CPU requests data from memory, the memory controller decodes the ECC bits and determines if one or more of the data bits are corrupted. If there's a single-bit error, the ECC circuit corrects the bit. In the rare case of a multiple-bit error, the ECC circuit reports a parity error.
Memory Scrubbing Memory scrubbing is a feature initially implemented by most major server OEMs when ECC DIMMs first became available. Memory scrubbing refers to a process that actively reads memory during idle periods to search for and correct errors in memory. Therefore, the entire memory subsystem would be periodically checked and cleansed as the scrubbing process repeated itself over and over. If non-correctable memory errors are found the server management system would be alerted as to which DIMM was causing the errors.
Chipkill Chipkill is a highly advanced error correction method much more effective than standard ECC correction. Chipkill provides error correction for up to four bits per DIMM. If too many memory errors are detected chipkill technology can take the inoperative chip offline while the server is still running to keep more errors from occurring. Chipkill support is provided in the memory controller and implemented using standard ECC DIMMs, so it is transparent to the OS.
OTHER SPECIFICATIONS In addition to form factors, memory technologies, and error checking methods, there are several other specifications important to understanding and selecting memory products.
SPEED The speed of memory components and modules is one of the most important factors in optimizing a memory configuration. In fact, all computer systems specify a memory component speed. Ensuring memory compatibility requires conforming to this specification. This section covers three measurements of memory component and module speed: access time, megahertz, and bytes per second.
ACCESS TIME Prior to SDRAM, memory speed was expressed by access time, measured in nanoseconds (ns). A memory module's access time indicates the amount of time it takes the module to deliver on a data request. So, smaller numbers indicate faster access times. Typical speeds were 80ns, 70ns, and 60ns. Very often, you can identify the speed of a module by the part number on the chip: such part numbers end in "-6" for 60ns, "-7" for 70ns, and so on.
In most cases you can conform to a computer system's memory specification with a module rated at the required speed or faster. For example, if your system requires 70ns memory, you can use both 70ns and 60ns memory without a problem. However, some older systems check the module ID for the rated speed at system-boot up, and will only boot up if they recognize the exact speed they are looking for. If the system has an 80ns speed specification, for example, it won't accept anything different than 80ns, even if it is faster. In many cases, modules could still be built for these systems with faster memory chips on them, but the ID on the module would be set at the slower speed to insure compatibility with the system. This is why you can't always be sure of the rated speed on a module by looking at the speed markings on the memory chips.
MEGAHERTZ Beginning with the development of SDRAM technology, memory module speed has been measured in megahertz (MHz). Speed markings on the memory chips them-selves are typically still in nanoseconds. This can be confusing, especially since these nanosecond markings no longer measure access time, but instead measure the number of nanoseconds between clock cycles. For SDRAM chips with speeds of 66MHz, 100MHz, and 133MHz, for example, the corresponding marking on the chips are -15, -10, and -8, respectively.
This table shows the method for determining speed equivalencies between MHz and ns ratings.
| STEP 1 | STEP 2 | STEP 3 | STEP 4 |
| MHz = 1 million clock cycles per second | Multiply by 1 million to get total clock cycles per second | Constant: 1 billion nanoseconds per second | Divide nanoseconds per second (from Step 3) by clock cycles per second (from Step 2) to get nanoseconds per clock cycle |
| 66 | 66,000,000 | 1,000,000,000 | 15 |
| 100 | 100,000,000 | 1,000,000,000 | 10 |
| 133 | 133,000,000 | 1,000,000,000 | 7.5 |
| nanoseconds per second |
| 1,000,000,000ns |
| nanoseconds |
| = |
| = |
|
| clock cycles per second |
| clock cycles |
| clock cycle |
As noted in a previous section, the speed of the processor and the speed of the memory bus are normally not the same. The speed of memory is limited by the speed of the memory bus, which is the slowest link in the process.
BYTES PER SECOND Converting MHz to bytes per second can be confusing at first. The two most important pieces of information you need to make the conversion is the speed (in MHz) and the width (in bits) of the bus.
Bus Width: If you have an 8-bit bus, then 8 bits, or 1 byte of information at a time can travel on the bus. If you have a 64-bit bus, then 64-bits, or 8 bytes of information can travel at a time.
Bus Speed: If the memory bus speed is 100MHz, this measures 100 million clock cycles per second. Typically, one packet of information can travel on each clock cycle. If the 100MHz bus is 1 byte wide, then data can travel at 100 megabytes per second. Data travels on a 100MHz, 64-bit bus at 800 megabytes per second.
Rambus modules are sometimes measured in MHz and sometimes measured in megabytes per second. One type of Rambus module runs on a 400MHz bus, but because Rambus modules can send two pieces of information per clock cycle instead of one, the module is rated at 800MHz. This is sometimes referred to as PC-800. Because the Rambus bus width is 16-bit, or 2 bytes wide, data travels at 1600MB per second, or 1.6GB per second. Using the same logic, PC-600 Rambus transfers data at 1.2 gigabytes per second.
REGISTERS AND BUFFERS Registers and buffers improve memory operation by "re-driving" control signals in the memory chips. They can be external to the memory module, or they can be located on the module itself. Having registers and buffers placed directly on the memory module, enables a system to support a greater quantity of modules. So, you're likely to find these types of modules in servers and high-end workstations. It is important to note that when upgrading, unbuffered and buffered (or registered) modules cannot be mixed.
Buffering (EDO and FPM): For EDO and fast page modules, the process of re-driving the signals is called buffering. With buffering there is no loss of performance.
Registering (SDRAM): For SDRAM, the signal driving process is called registering. Registering is similar to buffering, except that in registering, the data is clocked in and out of the register by the system clock. Registered modules are slightly slower than non-registered modules, because the registering process takes one clock cycle.
An example of a buffered and a non-buffered module. They are keyed differently, to ensure that they can't be used in place of one another.
MULTIPLE-BANKED MODULES A multiple-banked module allows more flexibility in type of chips used. Multiple banking allows a memory designer to divide the module into banks, which means it can appear to the computer system to be more than one module. This design is equivalent to the banks of memory sockets in a computer: the system accesses one bank of memory at a time, regardless of how many actual memory sockets comprise a bank.
Some people confuse the terms "double-sided" and "dual-banked". To clarify:
Double- sided is a physical term meaning that chips are arranged on two sides of the memory module.
Dual-banked is an electrical term meaning that the module is divided electrically into two memory banks.
TIN VERSUS GOLD Memory modules are manufactured with either tin leads (connectors) or gold leads. Gold is a better conductor than tin. However, because tin is much less expensive than gold, computer manufacturers began using tin sockets on system boards in the early 1990s to reduce their costs. If you're buying memory and you have a choice - that is, compatible modules come in both tin and gold - it's best to match the metal of the module to the metal of the socket it will be going into. Matching metals can help avoid corrosion.
Kingston's policy has always been to match metals, so Kingston part numbers assigned to each computer system take the socket metal into account.
REFRESH RATES Refresh is the process of recharging, or re-energizing, the "memory cells" in a memory chip. Internally, computer memory is arranged as a matrix of memory cells in rows and columns - like the squares on a checkerboard - with each column being further divided by the I/O width of the memory chip. The entire organization of rows and columns is called a
DRAM array. DRAM is called "dynamic" RAM because it must be refreshed, or re-energized, thousands of times each second in order to retain data. It has to be refreshed because its memory cells are designed around tiny capacitors that store electrical charges. These capacitors work like very tiny batteries that lose their stored charges if they are not re-energized. Also, the process of reading data from the memory array drains these charges, so the memory cells must also be pre-charged before reading the data.
Cells are refreshed one row at a time (usually one row per refresh cycle).The term
refresh rate refers not to the time it takes to refresh the memory but to the total number of rows that it takes to refresh the entire DRAM array. For example, a refresh rate of 2K indicates that it takes 2,048 rows to refresh the array; likewise, a 4K rate indicates 4,096 rows.
Normally, the system's memory controller initiates the refresh operation. But some chips are able to "self refresh." This means that the DRAM chip has its own refresh circuitry and does not require intervention from the CPU or external memory controller. Self-refresh modules dramatically reduce power consumption and are often used in portable computers.
CAS LATENCY The term
CAS latency refers to the number of clock cycles it takes before a column can be addressed on the DRAM chip. Latency is a measure of delay, so a "CL2" CAS latency factor indicates a two-clock cycle delay, and a "CL3" latency factor indicates a three-clock cycle delay. When SDRAM chips first came out, it was difficult to produce chips with a CAS latency factor as low as CL2. And although some specifications called for CL2, many modules worked fine at a CAS latency factor of CL3.
HEAT SPREADERS AND HEAT SINKS As memory components get faster, chips become more dense and more circuits get squeezed onto smaller boards. Dissipation of excess heat becomes more of an issue. For several years now processors have incorporated fans. Newer memory module designs use heat sinks or heat spreaders to maintain safe operating temperatures.
SERIAL PRESENCE DETECT (SPD) AND PARALLEL PRESENCE DETECT (PPD) When a computer system boots up, it must "detect" the configuration of the memory modules in order to run properly. Parallel Presence Detect is the traditional method of relaying the required information by using a number of resistors. PPD is the method SIMMs and some DIMMs use to identify themselves. Serial Presence Detect uses an
EEPROM (Electrically Erasable Programmable Read-Only Memory) to store information about the module.
An EEPROM chip (also known as an E2PROM) differs from an EPROM in that it does not need to be removed from the computer to be modified. However, it does have to be erased and reprogrammed in its entirety, not selectively. It also has a limited lifespan - that is, the number of times it can be reprogrammed is limited.
NUMBER OF CLOCK LINES (2-CLOCK VERSUS 4-CLOCK) SDRAM memory requires that clock lines run from the system clock to the memory module. "2-clock" means there are two clock lines running to the module, and "4-clock" means there are four clock lines running to the module. The first Intel designs were 2-clock because there were only eight chips on the module. Later, 4-clock designs were developed, which allowed for fewer chips per clock line, thereby decreasing the load on each line and enabling a quicker data interface.
VOLTAGES Voltages on memory modules keep decreasing as memory cells in DRAMs get closer together and heat becomes more of an issue. Most computer systems used to operate at a standard of 5 volts. Compact notebook computers were the first to use 3.3-volt chips. This was not only because of heat issues; since lower voltage chips use less power, using them made it easier to prolong battery life. Now most desktops are standardized on 3.3-volt memory as well, but this is quickly being replaced by 2.5 voltage chips as products continue to get smaller and components closer together.
COMPOSITE VERSUS NON-COMPOSITE Composite and non-composite were terms first used by Apple Computer to explain the difference between modules of the same capacity that used a different number of chips. To illustrate: when the industry is transitioning from one chip density to another, there is normally a stage where you can build, for example, a memory module with 8 of the new density chips, or 32 of the old density chips. Apple referred to the module using the latest technology and fewer chips as "non-composite", and the version using earlier technology and greater number of chips as "composite". Because 32 chips on a module can cause heat and spacing problems, Apple would often advise customers to buy non-composite modules.
2.66" 144-Pin SO DIMM 
